symbol parameter ratings unit v ces collector-emitter voltage 1200 volts v ge gate-emitter voltage 30 i c1 continuous collector current @ t c = 25c 94 amps i c2 continuous collector current @ t c = 100c 50 i cm pulsed collector current 1 150 ssoa switching safe operating area @ t j = 150c 150a @ 1200v p d total power dissipation 625 watts t j , t stg operating and storage junction temperature range -55 to 150 c t l max. lead temp. for soldering: 0.063 from case for 10 sec. 300 maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. symbol characteristic / test conditions min typ max unit v (br)ces collector-emitter breakdown voltage (v ge = 0v, i c = 3ma) 1200 - - volts v ge(th) gate threshold voltage (v ce = v ge , i c = 2ma, t j = 25c) 4.5 5.5 6.5 v ce(on) collector emitter on voltage (v ge = 15v, i c = 50a, t j = 25c) 2.7 3.2 3.7 collector emitter on voltage (v ge = 15v, i c = 50a, t j = 125c) - 4.0 - i ces collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 - - 200 a collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 - - 2.0 ma i ges gate-emitter leakage current (v ge = 20v) - - 300 na static electrical characteristics caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed . microsemi website - http://www.microsemi.com 052-6270 rev e 3-2012 apt50gt120b2r(g) apt50gt120lr(g) 1200v, 50a, v ce(on) = 3.2v typical thunderbolt igbt ? the thunderbolt igbt ? is a new generation of high voltage power igbts. using non-punch-through technology, the thunderbolt igbt ? offers superior rugged- ness and ultrafast switching speed. features low forward voltage drop low tail current rohs compliant rbsoa and scsoa rated high frequency switching to 50khz ultra low leakage current unless stated otherwise, microsemi discrete igbts contain a single igbt die. this device is made with two parallel igbt die. it is intended for switch-mode operation. it is not suitable for linear mode operation. downloaded from: http:///
052-6270 rev e 3-2012 dynamic characteristics apt50gt120b2r_lr(g) symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v, v ce = 25v f = 1mhz - 3300 - pf c oes output capacitance - 500 - c res reverse transfer capacitance - 220 - v gep gate-to-emitter plateau voltage gate charge v ge = 15v v ce = 600v i c = 50a - 10.5 - v q g total gate charge - 340 - nc q ge gate-emitter charge -4 0 - q gc gate-collector charge - 210 - ssoa switching safe operating area t j = 150c, r g = 1.0 7 , v ge = 15v, l = 100 h, v ce = 1200v 150 a t d(on) turn-on delay time inductive switching (25c) v cc = 800v v ge = 15v i c = 50a r g = 4.7 t j = +25c -2 4 - ns t r current rise time -5 3 - t d(off) turn-off delay time - 230 - t f current fall time -2 6 - e on1 turn-on switching energy 4 - tbd - j e on2 turn-on switching energy 5 - 5330 - e off turn-off switching energy 6 - 2330 - t d(on) turn-on delay time inductive switching (125c) v cc = 800v v ge = 15v i c = 50a r g = 4.7 t j = 125c -2 4 - ns t r current rise time -5 3 - t d(off) turn-off delay time - 255 - t f current fall time -4 8 - e on1 turn-on switching energy 4 - tbd - j e on2 turn-on switching energy 5 - 5670 - e off turn-off switching energy 6 - 2850 - symbol characteristic / test conditions min typ max unit r jc junction to case - - 0.20 c/w w t package weight - - 5.9 gm 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ? gure 21, but with a silicon carbide diode. 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 7 r g is external gate resistance not including gate driver impedance. thermal and mechanical characteristics microsemi reserves the right to change, without notice, the speci? cations and information contained herein. downloaded from: http:///
typical performance curves apt50gt120b2r_lr(g) 052-6270 rev e 3-2012 0 20 40 60 80 100 25 50 75 100 125 150 0 1 2 3 4 5 6 7 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 0 1 2 3 4 5 6 11 12 13 14 15 16 10 9 8 0 25 50 75 100 125 150 10 12 14 8 6 4 2 0 0 25 50 75 100 125 150 0 1015202530 5 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 250 s pulse test<0.5 % duty cycle t j = 25c. 250 s pulse test <0.5 % duty cycle v ge = 15v. 250 s pulse test <0.5 % duty cycle i c = 25a i c = 50a i c = 100a i c = 25a i c = 50a i c = 100a 13v 8v 11v 7v 6v 15v i c = 50a t j = 25c v ce = 960v v ce = 600v v ce = 240v t j = 25c t j = -55c v ge = 15v t j = 55c t j = 150c v ce , collector-to-emitter voltage (v) figure 1, output characteristics (t j = 25c) i c , collector current (a) t j = 25c t j = 125c v ce , collector-to-emitter voltage (v) figure 2, output characteristics (t j = 25c) i c , collector current (a) 10v 9v t j = 125c v ce , gate-to-emitter voltage (v) figure 3, transfer characteristics i c , collector current (a) v ge , gate-to-emitter voltage (v) figure 5, on state voltage vs gate-to-emitter voltage v ce , collector-to-emitter voltage (v) gate charge (nc) figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 6, on state voltage vs junction temperature v ce , collector-to-emitter voltage (v) t c , case temperature (c) figure 8, dc collector current vs case temperature i c , dc collector current (a) 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 -.50 -.25 0 25 50 75 100 125 150 t j , junction temperature figure 7, threshold voltage vs junction temperature v gs(th) , threshold voltage (normalized) downloaded from: http:///
052-6270 rev e 3-2012 typical performance curves apt50gt120b2r_lr(g) 0 5,000 10,000 15,000 20,000 0 25 50 75 100 125 0 10,000 20,000 30,000 40,000 50,000 60,000 0 10 20 30 40 50 0 1,000 2,000 3,000 4,000 5,000 6,000 10 30 50 70 90 110 0 5,000 10,000 15,000 20,000 10 30 50 70 90 110 0 10 20 30 40 50 60 10 30 50 70 90 110 0 20 40 60 80 100 120 140 160 10 30 50 70 90 110 0 50 100 150 200 250 300 0 20 40 60 80 100 120 0 5 10 15 20 25 30 35 0 20 40 60 80 100 120 v ge =15v,t j =125c v ge =15v,t j =25c v ce = 800v r g = 1.0 l = 100 h v ce = 800v v ge = +15v r g = 1.0 v ce = 800v t j = 25c , or 125c r g = 1.0 l = 100 h v ge = 15v v ce = 800v v ge = +15v r g = 1.0 v ce = 800v v ge = +15v r g = 1.0 r g = 1.0 , l = 100 h, v ce = 800v t j = 125c t j = 25c t j = 125c t j = 25c r g = 1.0 , l = 100 h, v ce = 800v t j = 25 or 125c,v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v e on2, 100a e off, 100a e on2, 50a e off, 50a e on2, 25a e off, 25a v ce = 800v v ge = +15v t j = 125c e on2, 100a e off, 100a e on2, 50a e off, 50a e on2, 25a e off, 25a i ce , collector-to-emitter current (a) figure 9, turn-on delay time vs collector current t d(on) , turn-on delay time (ns) i ce , collector-to-emitter current (a) figure 10, turn-off delay time vs collector current t d(off) , turn-off delay time (ns) i ce , collector-to-emitter current (a) figure 11, current rise time vs collector current t r , rise time (ns) i ce , collector-to-emitter current (a) figure 12, current fall time vs collector current t r , fall time (ns) i ce , collector-to-emitter current (a) figure 13, turn-on energy loss vs collector current e on2 , turn on energy loss ( j) i ce , collector-to-emitter current (a) figure 14, turn-off energy loss vs collector current e off , turn off energy loss ( j) r g , gate resistance (ohms) figure 15, switching energy losses vs gate resistance switching energy losses ( j) t j , junction temperature (c) figure 16, switching energy losses vs junction temperature switching energy losses ( j) downloaded from: http:///
typical performance curves apt50gt120b2r_lr(g) 052-6270 rev e 3-2012 0 20 40 60 80 100 120 10 20 30 40 50 60 70 80 90 100 0 0.05 0. 1 0.15 0. 2 0.25 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 100 1000 5000 0 100 200 300 400 500 600 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration figure 19b, transient thermal impedance model f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 %v ce = 800v r g = 1.0 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc c oes c res c ies peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: 75c 100c 0.0487 0.151 0.00909 0.389 dissipated power (watts) t j (c) t c (c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to zero when modeling only the case to junction. z ext v ce , collector-to-emitter voltage (volts) figure 17, capacitance vs collector-to-emitter voltage c, capacitance (pf) 0 20 40 60 80 100 120 140 0 200 400 600 800 1000 1200 1400 160 v ce , collector-to-emitter voltage figure 18, minimum switching safe operating area i c , collector current (a) downloaded from: http:///
052-6270 rev e 3-2012 apt50gt120b2r_lr(g ) dimensions in millimeters and (inches) collector emitter gate collector 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090)2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122)3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016)0.79 (.031) collector emitter gate collector 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 2-plcs. t-max ? package outline to-264 package outline figure 22, turn-on switching waveforms and de? nitions t j = 125c collector current collector voltage gate voltage 5% 10% t d(on) 90% 10% t r 5% switching energy figure 23, turn-off switching waveforms and de? nitions t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% i c a d.u.t. v ce v cc apt30dq120 figure 21, inductive switching test circuit downloaded from: http:///
|
